Справочник MOSFET. CRTD055N03L

 

CRTD055N03L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CRTD055N03L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 97 ns
   Cossⓘ - Выходная емкость: 312 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO252

 Аналог (замена) для CRTD055N03L

 

 

CRTD055N03L Datasheet (PDF)

 ..1. Size:538K  crhj
crtd055n03l.pdf

CRTD055N03L
CRTD055N03L

CRTD055N03L() Trench N-MOSFET 30V, 4.3m, 58AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 4.3m Excellent QgxRDS(on) product(FOM) ID58A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.1. Size:647K  crhj
crtd084ne6n.pdf

CRTD055N03L
CRTD055N03L

CRTD084NE6N() Trench N-MOSFET 65V, 7.1m, 85AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 65V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID85A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.2. Size:560K  crhj
crtd030n04l.pdf

CRTD055N03L
CRTD055N03L

CRTD030N04L() Trench N-MOSFET 40V, 2.5m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 2.5m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.3. Size:563K  crhj
crtd030n03l.pdf

CRTD055N03L
CRTD055N03L

CRTD030N03L() Trench N-MOSFET 30V, 2.3m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.4. Size:591K  crhj
crtd063n04l.pdf

CRTD055N03L
CRTD055N03L

CRTD063N04L() Trench N-MOSFET 40V, 4.5m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 4.5m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteriaApplications100% DVDS Tested100% DVDS Tested100% DVDS Tested Motor

 9.5. Size:588K  crhj
crtd045n03l.pdf

CRTD055N03L
CRTD055N03L

CRTD045N03LTrench N-MOSFET 30V, 3.1m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 3.1m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteriaApplications100% DVDS Tested100% DVDS Tested100% DVDS Tested Motor control and drive Battery mana

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