AS2318 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 45m@10V 40V 5A 60m@4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking 4005. Document ID Issued Date Revised Date Revision Page. Pa

AS231 2 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.

AS2310 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 100m@10V 60V 3A 120m@4.5V Feature Application High power and current handing capability Battery Switch Lead free product is acquired DC/DC Converter Package Circuit diagram SOT-23 Marking S10. Document ID Issued Date Revised Date Revision Page. Page 1 AS-3150040 2003/03/08 2018