10N50TF - описание и поиск аналогов

10N50TF 10 Amps,500 Volts N-CHANNEL Power MOSFET FEATURE TO-220TF 10A,500V,R =0.75 @V =10V/5A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Halogen free Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 10N50TF Drain-Source Voltage V 500 DSS V Gate-Source Volt

MDF10N50 N-Channel MOSFET 500V, 10 A, 0.75 General Description Features The MDF10N50 uses advanced MagnaChip s MOSFET V = 500V DS Technology, which provides low on-state resistance, high I = 10.0A @ V = 10V D GS switching performance and excellent quality. R 0.75 @ V = 10V DS(ON) GS MDF10N50 is suitable device for SMPS, high Speed Applications switching and gene

MDP10N50 N-Channel MOSFET 500V, 10.0 A, 0.75 General Description Features The MDP10N50 uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on- ID = 10.0A @VGS = 10V state resistance, high switching performance RDS(ON)

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500V EMITTER VCE(ON) 2.5V Max. COLLECTOR TFI 1 s, 0.5 s GATE COLLECTOR (FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

HGTD10N40F1, HGTD10N40F1S, S E M I C O N D U C T O R HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTD10N40F1, HGTD10N50F1 10A, 400V and 500V JEDEC TO-251AA VCE(ON) 2.5V Max. EMITTER TFALL 1.4 s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR (FLANGE) High Input Impedance Applications

November 2009 UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05 Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis- tors are p roduced using Fa irchild s proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 9pF) This advan ce technology

December 2006 TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description 10A, 500V, RDS(on) = 0.61 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 16pF) This advanced technology has been espe

January 2009 UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85 Features Description RDS(on) = 0.71 ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 10pF) This advance technology has

October 2013 FQB10N50CF N-Channel QFET FRFET MOSFET 500 V, 10 A, 610 m Features Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using Fairchild Semiconductor s proprietary planar stripe Low gate charge ( Typ. 45 nC) and DMOS technology. This advanced MOSFET technology has been esp

ZXT10N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 50V Case SOT26 IC = 3A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 6A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 75m for a Low Equivalent On-Resistance Moisture Sensitivity Level 1

IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation in Common Source Mode 150V (operating) Symbol Test Conditions Maximum Ratings TJ = 25 C to 150 C VDSS 500 V TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VG

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) Note All data is per the IXZ210N50L single ended device unless otherwise noted. 300 & 550 Watts Symbol Tes

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) Note All data is per the IXZ210N50L single ended device unless otherwise noted. 300 & 550 Watts Symbol Tes

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 10N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand 1 hig

RFH10N45, RFH10N50 Semiconductor Data Sheet October 1998 File Number 1629.2 10A, 450V and 500V, 0.600 Ohm, Features N-Channel Power MOSFETs 10A, 450V and 500V [ /Title These are N-Channel enhancement mode silicon gate rDS(ON) = 0.600 (RFH10 power field effect transistors designed for applications such Related Literature as switching regulators, switching converters, m

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON) 2.5V Max. EMITTER COLLECTOR TFALL 1 s, 0.5 s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impeda

AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150 The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

N N- CHANNEL MOSFET R MP10N50EI MAIN CHARACTERISTICS Package ID 10 A VDSS 500 V Rdson-max @Vgs=10V 0.70 Qg-typ 34.38nC APPLICATIONS High efficiency switch mode power supplies - Electronic lamp ballasts UPS based on half bridge

Silicon N-Channel Power MOSFET R CS10N50 A8R General Description VDSS 500 V CS10N50 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS10N50F A9R General Description VDSS 500 V CS10N50F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

F10N50 10A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 10.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS 500V ID 10A High ruggedness Low RDS(ON) (Typ 0.26 )@VGS=10V RDS(ON) 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application LED, PC Power, Cha

FIR10N50FG N - CHANNEL MOSFET-G PIN Connection TO-220F VDSS 500 V ID 10 A PD(TC=25 ) 40 W RDS(ON)Typ 0.5 General Description G D S , the silicon N-channel Enhanced FIR10N50FG VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can be

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.A General Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

isc N-Channel MOSFET Transistor 10N50 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for applications such as switching regulators, switching converters,motor drivers,relay drivers and drivers for power

isc N-Channel MOSFET Transistor AOTF10N50FD FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p