150N06Y - описание и поиск аналогов

150N06Y 150 Amps,60 Volts N-CHANNEL MOSFET FEATURE TO-247 150A,60V,R =6m @V =10V/30A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 150N06Y Drain-Source Voltage V 60 DSS V Gate-Source Voltage V 30 GSS Continuous

Data Sheet 4V Drive Nch MOSFET RSD150N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Applications Switching Packaging specifications Inner ci

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD150N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Applications Switching Packaging spec

IXTQ 150N06P VDSS = 60 V PolarHTTM ID25 = 150 A Power MOSFET RDS(on) 10 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C60 V VDGR TJ = 25 C to 175 C; RGS = 1 M 60 V VGS Continuous 20 V G VGSM Transient 30 V D (TAB) S ID25 TC = 25 C 150 A IDRMS Ext

OMS150N06FL OMS60L60FL Preliminary Data Sheet OMS120N10FL OMS50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Easy-To-Connect To Package DESCRIPTION These modules are ideally suited for high d

UNISONIC TECHNOLOGIES CO., LTD UTT150N06 Preliminary Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT150N06 is generally applied in synchronous Rectification or DC t

N N-CHANNEL MOSFET FHA150N06C MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 55 V Crss ( 850pF) Low Crss (typical 850pF ) Rdson-typ @Vgs=10V 7.2 m Fast switching Qg-typ 118nC 100% 100% avalanche tested dv/dt Improved

SII150N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 180(150) TC= 25(60)oC A ICRM 300 TC= 60oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 595 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter IF 150 A IFRM 300 tP =1ms A 2 VR

FIR150N06PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

RoHS COMPLIANT YJP150N06AQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications

RoHS COMPLIANT YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications

HMS150N06D N-Channel Super Trench Power MOSFET Description The HMS150N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti