Справочник MOSFET. SSF4N90AS

 

SSF4N90AS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF4N90AS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 31 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.7 Ohm
   Тип корпуса: TO3PF

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SSF4N90AS Datasheet (PDF)

 ..1. Size:206K  samsung
ssf4n90as.pdf

SSF4N90AS
SSF4N90AS

SSF4N90ASAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 9.1. Size:208K  samsung
ssf4n80as.pdf

SSF4N90AS
SSF4N90AS

SSF4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 (Typ.)c1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

 9.2. Size:510K  silikron
ssf4n60g.pdf

SSF4N90AS
SSF4N90AS

SSF4N60G Main Product Characteristics: VDSS 600V RDS(on) 1.85 (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.3. Size:518K  silikron
ssf4n60d.pdf

SSF4N90AS
SSF4N90AS

SSF4N60D Main Product Characteristics: VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.4. Size:519K  silikron
ssf4ns60d.pdf

SSF4N90AS
SSF4N90AS

SSF4NS60D Main Product Characteristics: VDSS 600V RDS(on) 1.1 (typ.) ID 4A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF4NS60D series MOSFETs is a new te

 9.5. Size:524K  silikron
ssf4n60f.pdf

SSF4N90AS
SSF4N90AS

SSF4N60F Main Product Characteristics: VDSS 600V RDS(on) 1.9(typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.6. Size:649K  silikron
ssf4n60.pdf

SSF4N90AS
SSF4N90AS

SSF4N60 Features Vdss = 600V Extremely high dv/dt capability Id = 4A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage NChannel enhancement mode

Другие MOSFET... SSF10N60A , SSF10N80A , SSF10N90A , SSF17N60A , SSF22N50A , SSF25N40A , SSF45N20A , SSF4N80AS , EMB04N03H , SSF5N80A , SSF5N90A , SSF6N70A , SSF6N80A , SSF6N90A , SSF70N10A , SSF7N60A , SSF7N80A .

 

 
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