SSF5N80A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF5N80A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 85 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 52 nC
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 110 pf
Сопротивление сток-исток открытого транзистора (Rds): 2.2 Ohm
Тип корпуса: TO3PF
SSF5N80A Datasheet (PDF)
ssf5ns65ug.pdf
SSF5NS65UG Main Product Characteristics: VDSS 650V RDS(on) 1.1 (typ.) ID 5A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UG series MOSFETs is a new technology,
ssf5ns50u.pdf
SSF5NS50U Main Product Characteristics: VDSS 500V RDS(on) 0.55 (typ.) ID 5A Marking and pi n TO-220 Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS50U series MOSFETs is a new technology, which
ssf5ns70ug.pdf
SSF5NS70UG Main Product Characteristics VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS70UG series MOSFETs is a new technology, whi
ssf5ns60ud.pdf
SSF5NS60UD Main Product Characteristics: VDSS 600V RDS(on) 0.73 (typ.) ID 5A TO-252 (D-PAK) Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS60UD series MOSFETs is a new tec
ssf5n50d.pdf
SSF5N50D Main Product Characteristics: VDSS 500V RDS(on) 1.5 (typ.) ID 5A TO-252 Marking a nd p in S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf5ns70g-d-f.pdf
SSF5NS70G/D/F Main Product Characteristics: VDSS 700V RDS(on) 1.23 (typ.) ID 5A 251 TO-252 TO- TO-220F Schematic diagram SSF5NS70G SSF5NS70D SSF5NS70F Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70G/D/F s
ssf5ns65g.pdf
SSF5NS65G Main Product Characteristics: VDSS 650V RDS(on) 1.0 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65G series MOSFETs is a new te
ssf5ns70gbp.pdf
SSF5NS70GB Main Product Characteristics VDSS 700V RDS(on) 1.3 (typ.) ID 5A TO-251S Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70GB series MOSFETs is a new technology, which com
ssf5n60d.pdf
SSF5N60D Main Product Characteristics: VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf5n60f.pdf
SSF5N60FMain Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.)ID 4AMarking and pin TO220FSchematic diagramFeatures and Benefits: Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150
ssf5ns65ud.pdf
SSF5NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.74 (typ.) ID 5A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UD series MOSFETs is a new technology,
ssf5ns70uf.pdf
SSF5NS70UF Main Product Characteristics: VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-220F Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70UF series MOSFETs is a new technology, which c
ssf5n60g.pdf
SSF5N60G Main Product Characteristics: VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf5ns65uf.pdf
SSF5NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 5A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UF series MOSFETs is a new technology, which
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