7N60GS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 7N60GS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 63 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 6.2 ns
Выходная емкость (Cd): 310 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.58 Ohm
Тип корпуса: TO252
7N60GS Datasheet (PDF)
7n60gs 7n60ds.pdf
7N60(G,D)S7 Amps,600 Volts N-Channel Super Junction Power MOSFETFEATURE 7A,600V,R =0.58@V =10V/3.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability Integrated ESD protection diodeTO-252 TO-2517N60GS 7N60DSAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT7N60
7n60l-ta3-t 7n60g-ta3-t 7n60l-tf3-t 7n60g-tf3-t 7n60l-tf1-t 7n60g-tf1-t 7n60l-tf2-t 7n60g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio
7n60l-tf3t-t 7n60g-tf3t-t 7n60l-t2q-t 7n60g-t2q-t 7n60l-tq2-t 7n60g-tq2-t 7n60l-tq2-r 7n60g-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio
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