MTB028N10QNCQ8 - аналоги, параметры транзистора

MTB028N10QNCQ8 даташит

..1. Size:478K cystek
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Spec. No. C168Q8 Issued Date 2016.11.18 CYStech Electronics Corp. Revised Date 2016.11.22 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTB028N10QNCQ8 BVDSS 100V ID @ TA=25 C, VGS=10V 6.6A RDS(ON)@VGS=10V, ID=4A 19.3 m (typ) Features RDS(ON)@VGS=4.5V, ID=3A 27.0m (typ) Single Drive Requirement Low On-resistance Fast Switching Characterist

9.1. Size:331K cystek
mtb02n03h8.pdf pdf_icon

Spec. No. C575H8 Issued Date 2012.05.09 CYStech Electronics Corp. Revised Date 2012.11.12 Page No. 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB02N03H8 ID 75A RDS(ON)@VGS=10V, ID=30A 2.6 m (typ) RDS(ON)@VGS=4.5V, ID=25A 3.5 m (typ) Description The MTB02N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

9.2. Size:311K cystek
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Spec. No. C575Q8 Issued Date 2012.01.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB02N03Q8 ID 25A RDSON@VGS=10V, ID=25A 2.2m (typ) RDSON@VGS=4.5V, ID=15A 2.3m (typ) Description The MTB02N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

9.3. Size:279K cystek
mtb02n03j3.pdf pdf_icon

Spec. No. C575J3 Issued Date 2012.01.03 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB02N03J3 ID 136A RDS(ON)@VGS=10V, ID=45A 2.7m (typ) RDS(ON)@VGS=4.5V, ID=36A 3.8m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS com

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