MTB030N10RQ8 - аналоги, параметры транзистора

MTB030N10RQ8 даташит

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Spec. No. C053Q8 Issued Date 2016.11.04 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTB030N10RQ8 BVDSS 100V ID @ TA=25 C, VGS=10V 6.2A RDS(ON)@VGS=10V, ID=10A 22.7 m (typ) Features RDS(ON)@VGS=4.5V, ID=8A 27.5 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Rep

7.1. Size:625K cystek
mtb030n04n3.pdf pdf_icon

Spec. No. C884N3 Issued Date 2014.08.20 CYStech Electronics Corp. Revised Date Page No. 1/ 9 40V N-Channel Enhancement Mode MOSFET BVDSS 40V MTB030N04N3 ID @VGS=10V 8A VGS=10V, ID=7.9A 25.3m RDSON(TYP) VGS=4.5V, ID=7.3A 34.2m Features Low on-resistance Low voltage gate drive Excellent thermal and electrical capabilities Pb-free l

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mtb03n03h8.pdf pdf_icon

Spec. No. C788H8 Issued Date 2010.09.23 CYStech Electronics Corp. Revised Date 2010.10.06 Page No. 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB03N03H8 ID 75A RDSON(max) 3m Description The MTB03N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

9.2. Size:655K cystek
mtb032p06v8.pdf pdf_icon

Spec. No. C924V8 Issued Date 2013.06.06 CYStech Electronics Corp. Revised Date 2014.08.11 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTB032P06V8 ID -25A RDSON@VGS=10V, ID=-6A 29m (typ) RDSON@VGS=-4.5V, ID=-4A 33m (typ) Description The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

Другие MOSFET... AP9963GP , AP9977GM-HF , AP9985GM-HF , AP9T18GH-HF , FBM75N68P , FBM75N68B , MTA50P01SN3 , MTB028N10QNCQ8 , 10N65 , MTB095N10KRL3 , MTB095N10KRN3 , MTB1D0N03RH8 , MTB20N06KJ3 , MTB280N15L3 , MTB340N11N6 , MTC3586BDFA6 , MTC3587DL8 .