MTB095N10KRN3 - описание и поиск аналогов

Spec. No. C714N3 CYStech Electronics Corp. Issued Date 2017.01.13 Revised Date 2017.10.26 Page No. 1/9 100V N-Channel Enhancement Mode MOSFET MTB095N10KRN3 BVDSS 100V ID@ TA=25 C, VGS=10V 2.3A RDSON@VGS=10V, ID=1.5A 100m (typ) Features RDSON@VGS=4.5V, ID=1A 140m (typ) Simple drive requirement Small package outline ESD protected gate Pb-free le

Spec. No. C714L3 Issued Date 2017.06.19 CYStech Electronics Corp. Revised Date 2018.08.30 Page No. 1/9 N-Channel Enhancement Mode MOSFET MTB095N10KRL3 BVDSS 100V ID @ VGS=10V, TA=25 C 3.3A Features 107m (typ.) RDSON@VGS=10V, ID=2A 127m (typ.) RDSON@VGS=4.5V, ID=2A Low Gate Charge Simple Drive Requirement ESD protected gate Pb-fr

Spec. No. C808J3 Issued Date 2010.01.18 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTB09P03J3 ID -75A 8m (typ.) RDSON@VGS=-10V, ID=-25A 11m (typ.) Features RDSON@VGS=-4.5V, ID=-10A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag

Spec. No. C912J3 Issued Date 2013.07.24 CYStech Electronics Corp. Revised Date 2014.07.24 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m (typ) RDS(ON)@VGS=4.5V, ID=20A 9 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi

Spec. No. C420N3 CYStech Electronics Corp. Issued Date 2014.01.24 Revised Date 2018.07.26 Page No. 1/9 60V N-CHANNEL Enhancement Mode MOSFET BVDSS 60V MTB090N06N3 ID @ TA=25 C, VGS=10V 3.9A RDSON@VGS=10V, ID=3A 67m (typ) RDSON@VGS=4.5V, ID=2A 75m (typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free

Spec. No. C808E3 Issued Date 2014.12.22 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTB09P03E3 ID @ VGS=-10V, TC=25 C -75A ID @ VGS=-10V, TA=25 C -11.6A 6.7m RDSON(TYP) @ VGS=-10V, ID=-25A RDSON(TYP) @ VGS=-4.5V, ID=-10A 10.2m Features Low Gate Charge Simple Drive Requirement

Spec. No. C877J3 Issued Date 2014.12.25 CYStech Electronics Corp. Revised Date 2014.12.26 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -40V MTB09P04DJ3 ID@VGS=-10V, TC=25 C -50A ID@VGS=-10V, TA=25 C -13.7A RDS(ON)@VGS=-10V, ID=-25A 5.2m (typ) RDS(ON)@VGS=-4.5V, ID=-15A 6.9m (typ) Features Single Drive Requirement Low On-resistance

Spec. No. C892H8 Issued Date 2013.02.01 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 40V MTB09N04H8 ID 60A 6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTB09N04H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching

Spec. No. C709H8 Issued Date 2009.05.07 CYStech Electronics Corp. Revised Date 2012.11.12 Page No. 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB09N03H8 ID 56A RDS(ON)@VGS=10V, ID=25A 7 m (typ) RDS(ON)@VGS=4.5V, ID=20A 13 m (typ) Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

Spec. No. C912Q8 Issued Date 2014.07.24 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06Q8 ID @VGS=10V 18A RDSON@VGS=10V, ID=12A 7.3m (typ) RDSON@VGS=4.5V, ID=10A 8.4m (typ) Features Single Drive Requirement Fast Switching Characteristic Low RDS(ON) Pb-free lead plating and ha

Spec. No. C420I3 Issued Date 2014.07.11 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB090N06I3 ID@VGS=10V 5A 70m VGS=10V, ID=3A RDSON(TYP) 82m VGS=4.5V, ID=2A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead

Spec. No. C709V8 Issued Date 2012.08.20 CYStech Electronics Corp. Revised Date 2012.08.23 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB09N03V8 ID 37.5A 6.8m VGS=10V, ID=12A RDSON(TYP) 13.1m VGS=4.5V, ID=8A Description The MTB09N03V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination o