MTB095N10KRN3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTB095N10KRN3
Маркировка: BHNH*
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 2.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 3.6 nC
Время нарастания (tr): 16.6 ns
Выходная емкость (Cd): 28 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.13 Ohm
Тип корпуса: SOT23
Аналог (замена) для MTB095N10KRN3
MTB095N10KRN3 Datasheet (PDF)
mtb095n10krn3.pdf
Spec. No. : C714N3 CYStech Electronics Corp. Issued Date : 2017.01.13 Revised Date : 2017.10.26 Page No. : 1/9 100V N-Channel Enhancement Mode MOSFET MTB095N10KRN3 BVDSS 100VID@ TA=25C, VGS=10V 2.3ARDSON@VGS=10V, ID=1.5A 100m(typ)Features RDSON@VGS=4.5V, ID=1A 140m(typ) Simple drive requirement Small package outline ESD protected gate Pb-free le
mtb095n10krl3.pdf
Spec. No. : C714L3 Issued Date : 2017.06.19 CYStech Electronics Corp. Revised Date : 2018.08.30 Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTB095N10KRL3 BVDSS 100V ID @ VGS=10V, TA=25C 3.3A Features 107m (typ.) RDSON@VGS=10V, ID=2A 127m (typ.) RDSON@VGS=4.5V, ID=2A Low Gate Charge Simple Drive Requirement ESD protected gate Pb-fr
mtb09p03j3.pdf
Spec. No. : C808J3 Issued Date : 2010.01.18 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30VMTB09P03J3 ID -75A8m(typ.) RDSON@VGS=-10V, ID=-25A 11m(typ.)Features RDSON@VGS=-4.5V, ID=-10A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag
mtb09n06j3.pdf
Spec. No. : C912J3 Issued Date : 2013.07.24 CYStech Electronics Corp. Revised Date : 2014.07.24 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m(typ) RDS(ON)@VGS=4.5V, ID=20A 9 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi
mtb090n06n3.pdf
Spec. No. : C420N3 CYStech Electronics Corp. Issued Date : 2014.01.24 Revised Date : 2018.07.26 Page No. : 1/9 60V N-CHANNEL Enhancement Mode MOSFET BVDSS 60V MTB090N06N3 ID @ TA=25C, VGS=10V 3.9A RDSON@VGS=10V, ID=3A 67m(typ) RDSON@VGS=4.5V, ID=2A 75m(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free
mtb09p03e3.pdf
Spec. No. : C808E3 Issued Date : 2014.12.22 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTB09P03E3 ID @ VGS=-10V, TC=25C -75A ID @ VGS=-10V, TA=25C -11.6A 6.7m RDSON(TYP) @ VGS=-10V, ID=-25A RDSON(TYP) @ VGS=-4.5V, ID=-10A 10.2m Features Low Gate Charge Simple Drive Requirement
mtb09p04dj3.pdf
Spec. No. : C877J3 Issued Date : 2014.12.25 CYStech Electronics Corp.Revised Date : 2014.12.26 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB09P04DJ3 ID@VGS=-10V, TC=25C -50A ID@VGS=-10V, TA=25C -13.7A RDS(ON)@VGS=-10V, ID=-25A 5.2m(typ) RDS(ON)@VGS=-4.5V, ID=-15A 6.9m(typ) Features Single Drive Requirement Low On-resistance
mtb09n04h8.pdf
Spec. No. : C892H8 Issued Date : 2013.02.01 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 40VMTB09N04H8ID 60A6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTB09N04H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching
mtb09n03h8.pdf
Spec. No. : C709H8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB09N03H8ID 56ARDS(ON)@VGS=10V, ID=25A 7 m(typ) RDS(ON)@VGS=4.5V, ID=20A 13 m(typ) Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin
mtb09n06q8.pdf
Spec. No. : C912Q8 Issued Date : 2014.07.24 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06Q8 ID @VGS=10V 18A RDSON@VGS=10V, ID=12A 7.3m(typ) RDSON@VGS=4.5V, ID=10A 8.4m(typ) Features Single Drive Requirement Fast Switching Characteristic Low RDS(ON) Pb-free lead plating and ha
mtb090n06i3.pdf
Spec. No. : C420I3 Issued Date : 2014.07.11 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB090N06I3 ID@VGS=10V 5A70m VGS=10V, ID=3A RDSON(TYP) 82m VGS=4.5V, ID=2A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead
mtb09n03v8.pdf
Spec. No. : C709V8 Issued Date : 2012.08.20 CYStech Electronics Corp.Revised Date : 2012.08.23 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB09N03V8ID 37.5A6.8m VGS=10V, ID=12A RDSON(TYP) 13.1m VGS=4.5V, ID=8A Description The MTB09N03V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination o
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