MTC3586BDFA6 - описание и поиск аналогов

Spec. No. C835DFA6 Issued Date 2015.11.02 CYStech Electronics Corp. Revised Date 2018.05.03 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3586BDFA6 BVDSS 20V -20V ID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) Description 82m (VGS=1.5V) 280m (VGS=-1.5V) The MTC3586BDFA6 cons

Spec. No. C835DFA6 Issued Date 2013.06.03 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3586DFA6 BVDSS 20V -20V ID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) Description 82m (VGS=1.5V) 280m (VGS=-1.5V) The MTC3586DFA6 consis

Spec. No. C416G6 Issued Date 2007.07.13 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3585G6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Features Simple drive requirement

Spec. No. C416G6 Issued Date 2007.07.12 CYStech Electronics Corp. Revised Date 2013.09.06 Page No. 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC3585N6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Description The MTC3585N6 consist

Spec. No. C102N6 Issued Date 2015.08.13 CYStech Electronics Corp. Revised Date 2017.03.30 Page No. 1/12 N- And P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTC3588N6 BVDSS 14V -14V ID @ TA=25 C 5.4A(VGS=4.5V) -3.6A(VGS=-4.5 V) 17.6m (VGS=4.5V) 45.1m (VGS=-4.5V) RDSON(TYP.) 24.7m (VGS=2.5V) 65.6m (VGS=-2.5V) Features Simple drive requirement

Spec. No. C102DFA6 Issued Date 2015.12.03 CYStech Electronics Corp. Revised Date 2018.05.03 Page No. 1/13 N- And P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3588BDFA6 14V -14V BVDSS 6A(VGS=4.5V) -4A(VGS=-4.5 V) ID 16.6m (VGS=4.5V) 43m (VGS=-4.5V) 23.7m (VGS=2.5V) 63.6m (VGS=-2.5V) RDSON(TYP.) 38.5m (VGS=1.8V) 86.5m (VGS=-1.8V) 66.3m (VGS=1.5V) 15

Spec. No. C093L8 Issued Date 2016.09.30 CYStech Electronics Corp. Revised Date 2017.09.29 Page No. 1/13 N- and P-Channel Enhancement Mode Power MOSFET MTC3587DL8 N-CH P-CH BVDSS 20V -20V 4.9A(VGS=4.5V) -3.9A(VGS=-4.5 V) ID @ TA=25 C Features 32m (VGS=4.5V) 50m (VGS=-4.5V) Simple drive requirement RDSON(TYP.) 43m (VGS=2.5V) 62m (VGS=-2.5V) Low gat