CS10N60P - описание и поиск аналогов

nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N60F,CS10N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N60F TO-220F CS10N60F CS

nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N60F,CS10N60P,CS1060K 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N60F TO-220F CS10

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES

N R N-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10V Qg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

BRCS10N60AA Rev.A Sep.-2017 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici

Silicon N-Channel Power MOSFET R CS10N60 A8R General Description VDSS 600 V CS10N60 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Silicon N-Channel Power MOSFET R CS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

Silicon N-Channel Power MOSFET R CS10N60 A8HD VDSS 600 V General Description ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

CS10N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S E

BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

Silicon N-Channel Power MOSFET R CS10N60 A8HD VDSS 600 V General Description ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p