SSF8N90A - описание и поиск аналогов

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

SSF8N60 Features VDSS = 600V Extremely high dv/dt capability ID = 8A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.85 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF8N60 is a new generation of high voltage N Channel enhancement mod

SSF8NP60U Main Product Characteristics VDSS 600V RDS(on) 0.73 (typ.) ID 8A Marking and p in Schematic diagram TO-220 Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description It utilizes the latest processing techniques to achieve

SSF8N80F Main Product Characteristics VDSS 800V RDS(on) 1.3 (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

SSF8N80 Main Product Characteristics VDSS 800V RDS(on) 1.38 (typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

SSF8N65 Features VDSS = 650V Extremely high dv/dt capability ID = 8A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.95 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF8N65 is a new generation of high voltage N Channel enhancement mod