Справочник MOSFET. CS16N65F

 

CS16N65F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS16N65F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 98 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 204 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для CS16N65F

 

 

CS16N65F Datasheet (PDF)

 ..1. Size:511K  convert
 cs16n65f cs16n65p cs16n65w.pdf

CS16N65F CS16N65F

nvertCS16N65F,CS16N65P,CS16N65WSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS1

 ..2. Size:625K  convert
 cs16n65f.pdf

CS16N65F CS16N65F

nvertSuzhou Convert Semiconductor Co ., Ltd. CS16N65F650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS16N65FAbsolute Max

 0.1. Size:307K  wuxi china
 cs16n65fa9h.pdf

CS16N65F CS16N65F

Silicon N-Channel Power MOSFET RCS16N65F A9H VDSS 650 V General Description ID 16 A CS16N65F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.1. Size:426K  crhj
 cs16n60 a8h.pdf

CS16N65F CS16N65F

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.2. Size:306K  crhj
 cs16n60f a9h.pdf

CS16N65F CS16N65F

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.3. Size:426K  wuxi china
 cs16n60a8h.pdf

CS16N65F CS16N65F

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.4. Size:776K  convert
 cs16n60f cs16n60p.pdf

CS16N65F CS16N65F

nvertSuzhou Convert Semiconductor Co ., Ltd.CS16N60F,CS16N60P600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N60F TO-220F CS16N60FCS

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top