CS16N65F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CS16N65F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 98 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 204 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
Тип корпуса: TO-220F
- подбор MOSFET транзистора по параметрам
CS16N65F Datasheet (PDF)
cs16n65f cs16n65p cs16n65w.pdf

nvertCS16N65F,CS16N65P,CS16N65WSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS1
cs16n65f.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd. CS16N65F650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS16N65FAbsolute Max
cs16n65fa9h.pdf

Silicon N-Channel Power MOSFET RCS16N65F A9H VDSS 650 V General Description ID 16 A CS16N65F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs16n60 a8h.pdf

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N7381 | VS3610GPMT | AOK27S60L | BSC079N03SG | AOD1N60 | CS20N65W | BUK661R8-30C
History: 2N7381 | VS3610GPMT | AOK27S60L | BSC079N03SG | AOD1N60 | CS20N65W | BUK661R8-30C



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