CS4N65U - описание и поиск аналогов

 ..1. Size:703K  convert
 cs4n65f cs4n65p cs4n65u cs4n65d.pdf 

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N65F,CS4N65P,CS4N65U,CS4N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N65F TO-220F

 8.1. Size:831K  jilin sino
 jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf 

N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 8.2. Size:1447K  jilin sino
 jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf 

R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate

 8.3. Size:779K  jilin sino
 jcs4n65f-c-r-v.pdf 

 8.4. Size:1598K  jilin sino
 jcs4n65vb jcs4n65rb jcs4n65bb jcs4n65sb jcs4n65cb jcs4n65fb.pdf 

N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V Rdson Vgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 8.5. Size:1866K  jilin sino
 jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf 

R JCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_ Typ 2.1 Vgs=1 Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low g

 8.6. Size:139K  can-sheng
 cs4n65 to-251 252.pdf 

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-251/TO-252 Plastic-Encapsulate Transistors 4N65 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits

 8.7. Size:677K  blue-rocket-elect
 brcs4n65aa.pdf 

BRCS4N65AA Rev.D Nov.-2017 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici

 8.8. Size:220K  crhj
 cs4n65 a3r.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.9. Size:354K  crhj
 cs4n65 a3hd.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.10. Size:237K  crhj
 cs4n65 a3tdy.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A3TDY General Description VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.11. Size:226K  crhj
 cs4n65 a4r.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A4R General Description VDSS 650 V CS4N65 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.12. Size:353K  crhj
 cs4n65 a3hdy.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.13. Size:596K  crhj
 cs4n65 a4hdy.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A4HDY General Description VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.14. Size:263K  crhj
 cs4n65f a9r.pdf 

Silicon N-Channel Power MOSFET R CS4N65F A9R General Description VDSS 650 V CS4N65F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.15. Size:345K  crhj
 cs4n65 a8hd.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A8HD 0General Description VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.16. Size:353K  crhj
 cs4n65 a4tdy.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A4TDY General Description VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 8.17. Size:171K  lzg
 cs4n65f.pdf 

BRF4N65(CS4N65F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 8.18. Size:353K  wuxi china
 cs4n65a4tdy.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A4TDY General Description VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 8.19. Size:596K  wuxi china
 cs4n65a4hdy.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A4HDY General Description VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.20. Size:231K  wuxi china
 cs4n65a3hd.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.21. Size:234K  wuxi china
 cs4n65fa9hd.pdf 

Silicon N-Channel Power MOSFET R CS4N65F A9HD General Description VDSS 650 V CS4N65F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.22. Size:226K  wuxi china
 cs4n65a4r.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A4R General Description VDSS 650 V CS4N65 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.23. Size:353K  wuxi china
 cs4n65a3hdy.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.24. Size:220K  wuxi china
 cs4n65a3r.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.25. Size:226K  wuxi china
 cs4n65a8hd.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A8HD 0General Description VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.26. Size:324K  wuxi china
 cs4n65a3hd1-g.pdf 

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N65 A3HD1-G General Description VDSS 650 V CS4N65 A3HD1-G, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto

 8.27. Size:237K  wuxi china
 cs4n65a3tdy.pdf 

Silicon N-Channel Power MOSFET R CS4N65 A3TDY General Description VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow