CS4N70U MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS4N70U
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 75 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 18.4 nC
Время нарастания (tr): 13.2 ns
Выходная емкость (Cd): 51 pf
Сопротивление сток-исток открытого транзистора (Rds): 3 Ohm
Тип корпуса: TO-251
CS4N70U Datasheet (PDF)
cs4n70f cs4n70p cs4n70u cs4n70d.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N70F,CS4N70P,CS4N70U,CS4N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N70F TO-220F
jcs4n70v jcs4n70r jcs4n70mf jcs4n70s jcs4n70b jcs4n70c jcs4n70f.pdf
N RN-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 700 V Rdson-max 2.8 @Vgs=10V Qg-typ 16nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS T0-251N-S2 FEA
jcs4n70v jcs4n70r jcs4n70mf jcs4n70c jcs4n70f jcs4n70b jcs4n70s.pdf
N RN-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A 700 V VDSS Rdson-max 2.8 Vgs=10V 16nC Qg-Typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
cs4n70 a4hd.pdf
Silicon N-Channel Power MOSFET R CS4N70 A4HD General Description VDSS 700 V CS4N70 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs4n70 arhd.pdf
Silicon N-Channel Power MOSFET R CS4N70 ARHD General Description VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs4n70 a3d.pdf
Silicon N-Channel Power MOSFET R CS4N70 A3D General Description VDSS 700 V CS4N70 A3D, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs4n70 a3hd-g.pdf
Silicon N-Channel Power MOSFET R CS4N70 A3HD-G General Description VDSS 700 V CS4N70 A3HD-G, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs4n70f a9d.pdf
Silicon N-Channel Power MOSFET R CS4N70F A9D General Description VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs4n70arhd.pdf
Silicon N-Channel Power MOSFET R CS4N70 ARHD General Description VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs4n70fa9d.pdf
Silicon N-Channel Power MOSFET R CS4N70F A9D General Description VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs4n70fa9r.pdf
Silicon N-Channel Power MOSFET R CS4N70F A9R General Description VDSS 700 V CS4N70F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.55 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SPU07N60S5
