CS50N06F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS50N06F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 57 nC
trⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 510 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: TO-220F
CS50N06F Datasheet (PDF)
cs50n06f cs50n06p cs50n06u cs50n06d.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS50N06F,CS50N06P,CS50N06U,CS50N06D60V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS50N06F TO-
jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf
N RN-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge
brcs50n06bd.pdf
BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications
brcs50n06ra.pdf
BRCS50N06RA Rev.A Sep.-2020 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. Halogen-free Product. / Applications
brcs50n06dp.pdf
BRCS50N06DP Rev.B Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications
brcs50n06ip.pdf
BRCS50N06IP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-251 N N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies, HF Product. / Applications
cs50n06.pdf
BR50N06(CS50N06) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C
cs50n06d.pdf
BRD50N06(CS50N06D) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXFN34N80
History: IXFN34N80
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918