CS6N90B - Даташиты. Аналоги. Основные параметры

nvertSuzhou Convert Semiconductor Co ., Ltd. CS6N90F,CS6N90P,CS6N90B900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N90F TO-220F CS6N90F

nvertSuzhou Convert Semiconductor Co ., Ltd. CS6N90F,CS6N90P,CS6N90B,CS6N90W900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N90F TO-220F

N RN-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS Package ID 6.0 A VDSS 900 V RdsonVgs=10V 3.0 -MAX Qg-Typ 24.0nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli

N RN-CHANNEL MOSFET JCS6N90H Package MAIN CHARACTERISTICS ID 6 A VDSS 900 V Rdson-max 3.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

Silicon N-Channel Power MOSFET R CS6N90F A9H General Description VDSS 900 V CS6N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 48 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.85 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Silicon N-Channel Power MOSFET R CS6N90 A8H General Description VDSS 900 V CS6N90 A8H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various