CS7N80P - описание и поиск аналогов

 ..1. Size:651K  convert
 cs7n80f cs7n80p.pdf 

nvert Suzhou Convert Semiconductor Co ., Ltd. CS7N80F, CS7N80P 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N80F TO-220F CS7N80F CS7N8

 8.1. Size:1165K  jilin sino
 jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf 

N R N-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po

 8.2. Size:667K  jilin sino
 jcs7n80fc.pdf 

 8.3. Size:424K  crhj
 cs7n80 a8.pdf 

Silicon N-Channel Power MOSFET R CS7N80 A8 General Description VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25 ) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.4. Size:303K  crhj
 cs7n80f a9.pdf 

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.5. Size:265K  foshan
 cs7n80f.pdf 

BRF7N80(CS7N80F) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switch mode power supplies. Features Low gate charge Low Crss Fast switching. /Absolute maximum ratings(Ta=25 )

 8.6. Size:424K  wuxi china
 cs7n80a8.pdf 

Silicon N-Channel Power MOSFET R CS7N80 A8 General Description VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25 ) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.7. Size:303K  wuxi china
 cs7n80fa9.pdf 

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power