CS7N80P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS7N80P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 70 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 49 nC
Время нарастания (tr): 28 ns
Выходная емкость (Cd): 128 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.6 Ohm
Тип корпуса: TO-220
CS7N80P Datasheet (PDF)
cs7n80f cs7n80p.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
nvertSuzhou Convert Semiconductor Co ., Ltd.CS7N80F, CS7N80P800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N80F TO-220F CS7N80FCS7N8
jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N RN-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po
jcs7n80fc.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N R N-CHANNEL MOSFET JCS7N80C Package MAIN CHARACTERISTICS 7A ID 800 V VDSS Rdson-max 1.8 @Vgs=10VQg-typ 32nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge
cs7n80 a8.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS7N80 A8 General Description VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs7n80f a9.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs7n80f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
BRF7N80(CS7N80F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switch mode power supplies. : Features: Low gate chargeLow Crss Fast switching. /Absolute maximum ratings(Ta=25)
cs7n80a8.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS7N80 A8 General Description VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs7n80fa9.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .