2SK1760. Аналоги и основные параметры
Наименование производителя: 2SK1760
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 150 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
Тип корпуса: TO3P
Аналог (замена) для 2SK1760
- подборⓘ MOSFET транзистора по параметрам
2SK1760 даташит
8.1. Size:217K toshiba
2sk1768.pdf 
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8.2. Size:268K toshiba
2sk1767.pdf 
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8.3. Size:110K toshiba
2sk1769.pdf 
www.DataSheet4U.com www.DataSheet4U.com
8.4. Size:79K renesas
2sk1762.pdf 
2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 (Previous ADE-208-1316) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D
8.5. Size:75K renesas
2sk1764.pdf 
2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 (Previous ADE-208-1317) Rev.2.00 Sep 07, 2005 Application Low frequency amplifier High speed switching Features Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PLZZ0004C
8.6. Size:92K renesas
rej03g0968 2sk1761ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. Size:89K renesas
rej03g0970 2sk1764ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. Size:92K renesas
rej03g0969 2sk1762ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:45K hitachi
2sk1761.pdf 
2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drai
8.10. Size:213K inchange semiconductor
2sk1767.pdf 
isc N-Channel MOSFET Transistor 2SK1767 DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-
8.11. Size:39K inchange semiconductor
2sk1766.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1766 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage VDSS= 250V(Min) Fast Switching Speed APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS
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