2N7002KD - описание и поиск аналогов

2N7002KD N-Channel SMD MOSFET ESD Protection Product Summary V(BR)DSS RDS(on)MAX ID 5.0 @10V 60V 0.34A 5.3 @4.5V Feature Application High density cell design for ultra low on-resistance Load Switch for Portable Devices Voltage controlled small signal switch DC/DC Converter Rugged and reliable High saturation current capability ESD protected Package Circuit diagram

Features

2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363 FEATURES A Low on-resistance E L Fast switching Speed 6 5 4 Low-voltage drive Easily designed drive circuits B ESD protected 2000V 1 2 3 F C H 6 5 4 MECHANICAL DATA J D2 G1 S1 D

TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m ) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5 @10V 6 60V 5 340mA 4 5.3 @4.5V 1 2 3 FEATURE APPLICATION z High density cell design for Low RDS on Load Switch for Portable Devices z Voltage controlled small signal switch DC/DC Converter z Rugged

2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead(Pb)-Free 4 1 2 3 Features * Low On-Resistance SOT-363(SC-88) * Fast Switching Speed * Low-voltage drive 6 5 4 * Easily designed drive circuits D2 G1 S1 * ESD Protected 2000V Mechanical Data *Case SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 S2 G2 D1 *Terminals Solderable per MIL-STD-202, Method 208 1 2

L2N7002KDW1T1G S-L2N7002KDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ESD Protected 2. D

2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers Relays, Displays, L

2N7002KDW N- Channel MOSFET Epoxy meets UL 94 V-0 flammability rating High density cell design for low RDS(ON) Voltage controlled small signal switch High Saturation Current Capability ESD Protected Device Marking Code 2N7002KDW K27 Maximum Ratings Ta = 25 Symbol Parameter Value Units VDS Drain-source Voltage 60 V VGS Gate-source-Voltage 20 V

JMTLB2N7002KDS Description JMT N-channel MOSFET Features Application V =60V, I =0.2A Battery Operated Systems DS D R

2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit inch (mm) FEATURES RDS(ON), VGS@10V,IDS@500mA=3 0.054(1.35) 0.045(1.15) RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems,

V 2.5

RoHS COMPLIANT 2N7002KDW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance