Справочник MOSFET. DMC2053UVT

 

DMC2053UVT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMC2053UVT
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 54 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: TSOT26

 Аналог (замена) для DMC2053UVT

 

 

DMC2053UVT Datasheet (PDF)

 ..1. Size:555K  diodes
 dmc2053uvt.pdf

DMC2053UVT DMC2053UVT

DMC2053UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device BVDSS RDS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 35m @ VGS = 4.5V 4.6A Low Input/Output Leakage N-Channel 20V 43m @ VGS = 2.5V 4.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 74m @ VGS = -4

 8.1. Size:446K  panasonic
 dmc20501.pdf

DMC2053UVT DMC2053UVT

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20501Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

 8.2. Size:456K  panasonic
 dmc205e0.pdf

DMC2053UVT DMC2053UVT

This product complies with the RoHS Directive (EU 2002/95/EC).DMC205E0Silicon NPN epitaxial planar typeFor High frequency amplificationDMC505E0 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter

 8.3. Size:453K  panasonic
 dmc205c0.pdf

DMC2053UVT DMC2053UVT

This product complies with the RoHS Directive (EU 2002/95/EC).DMC205C0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P

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