DMN2058U - аналоги, параметры транзистора - Справочник транзисторов

DMN2058U даташит

..1. Size:480K diodes
dmn2058u.pdf pdf_icon

DMN2058U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BVDSS RDS(ON) Max ID Max Low Gate Threshold Voltage Low Input Capacitance 4.6A 35m @ VGS = 10V Fast Switching Speed 20V Low Input/Output Leakage 40m @ VGS = 4.5V 4.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen an

8.1. Size:168K diodes
dmn2050l.pdf pdf_icon

DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 29m @VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity Level 1 per J-STD-020D 100m

8.2. Size:231K diodes
dmn2050lfdb.pdf pdf_icon

DMN2050LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 45m @ VGS = 4.5V 4.5A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 55m @ VGS = 2.5V 4.1A Halogen and Antimony Free

8.3. Size:327K diodes
dmn2056u.pdf pdf_icon

DMN2056U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 38m @ VGS = 4.5V 4.0A Fast Switching Speed 20V 45m @ VGS = 2.5V 3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)