SSH7N60A - аналоги, даташиты, параметры транзистора

SSH7N60A Datasheet (PDF)

..1. Size:912K samsung
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Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

9.1. Size:941K samsung
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Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

9.2. Size:930K samsung
ssh7n90a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value Un

Другие MOSFET... SSH60N10A , SSH6N55 , SSH6N60 , SSH6N70 , SSH6N70A , SSH6N80AS , SSH6N90A , SSH70N10A , IRF530 , SSH7N80A , SSH7N90A , SSH80N06A , SSH8N55 , SSH8N60 , SSH8N80A , SSH8N90A , SSH9N80A .