G15N10C - описание и поиск аналогов

GOFORD G15N10C General Description The G15N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features RDS(ON) VDSS ID @10V (typ) Schematic Diagram 100V 15A 70 m Ultra Low On-Resistance High UIS and UIS 100% Test Applic

IGW15N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM 1200V technology offering very low V CEsat G E low EMI maximum junction temperature 175 C qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant complete product spectrum and PSpice Mode

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef

TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

SSIG15N135H Main Product Characteristics VCES 1350V VCE(sat) 1.9V (typ.) ID 15A @ TC = 100 C Schema t ic d iagr am TO-247 Features and Benefits Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@15A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co

BRG15N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features RoHS Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product. / Applications

BRG15N120D /INSULATED-GATE BIPOLAR TRANSISTOR /Applications /General purpose inverter /Frequency converters /Induction Heating(IH) /Uninterrupted Power Supply(UPS) /Features /Low gate charge /Positive temperature coefficient /Lo

JNG15N120HS2 JNG15N120HS2 IGBT Features 1200V,15A V =2.2V@V =15V,I =15A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, genera

JNG15N120AI JNG15N120AI IGBT Features 1200V,15A VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverte

SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M

SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M