GT15N10S datasheet, подбор замены

 ..1. Size:587K  goford
 gt15n10s.pdf 

GOFORD GT15N10S N-Channel Enhancement Mode Power MOSFET Description The GT15N10S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS 100V ID (at VGS = 10V) 10A RDS(ON) (at VGS = 10V)

 7.1. Size:122K  toshiba
 gt15n101.pdf 

 8.1. Size:60K  ixys
 ixgt15n120bd1.pdf 

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2

 8.2. Size:66K  ixys
 ixgt15n120b2d1.pdf 

Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V (IXGH) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G TAB C

 8.3. Size:60K  ixys
 ixgt15n120cd1.pdf 

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2

 8.4. Size:170K  ixys
 ixgt15n120b.pdf 

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A

 8.5. Size:529K  ixys
 ixgh15n120b ixgt15n120b.pdf 

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A

 8.6. Size:52K  ixys
 ixgt15n120c.pdf 

IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V E VGEM Transient 30 V (TAB) IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-247 AD (IXGH) ICM TC =

 8.7. Size:100K  kec
 kgt15n120nda.pdf 

SEMICONDUCTOR KGT15N120NDA TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 + FEATURES _ d + 1.00 0.20 High spee

 8.8. Size:1466K  kec
 kgt15n120nds.pdf 

SEMICONDUCTOR KGT15N120NDS TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT

 8.9. Size:1565K  kec
 kgt15n120kda.pdf 

SEMICONDUCTOR KGT15N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely en

 8.10. Size:1600K  kec
 kgt15n135ndh.pdf 

SEMICONDUCTOR KGT15N135NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. _ + _ + _ + _ + FEATURES _ + High speed switching _ + _ + High system efficiency _ + _ + Soft current turn-off waveforms _

 8.11. Size:1558K  kec
 kgt15n135kdh.pdf 

SEMICONDUCTOR KGT15N135KDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanche c

 8.12. Size:1475K  kec
 kgt15n120ndh.pdf 

SEMICONDUCTOR KGT15N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT

 8.13. Size:1412K  cn vbsemi
 vbgt15n120p.pdf 

VBGT15N120P www.VBsemi.com General Description VBsemi IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 )

 8.14. Size:1504K  cn vbsemi
 vbgt15n135.pdf 

VBGT15N135 www.VBsemi.com General Description VBsemi IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. _ + _ + _ + _ + FEATURES _ + High speed switching _ + _ + High system efficiency _ + _ + Soft current turn-off waveforms _ + _ Extreme

 8.15. Size:1397K  cn vbsemi
 vbgt15n120.pdf 

VBGT15N120 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanc