DMT3009LDT Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DMT3009LDT
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 447 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0111 Ohm
Тип корпуса: V-DFN3030-8
Аналог (замена) для DMT3009LDT
DMT3009LDT Datasheet (PDF)
dmt3009ldt.pdf

DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low Gate Threshold Voltage Device BVDSS RDS(ON) Max TC = +25 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C (Note 10) Halogen and Antimony Free. Green Device (Note 3) 11.1m @ VGS = 10V 30A Q1 & Q2 30V 13.8m @ VGS = 4.5V 28A 22.0m @ VGS = 3.8V 22A
dmt3009lfvw-7.pdf

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by
dmt3009lfvw.pdf

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by
dmt3006lps-13.pdf

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En
Другие MOSFET... DMT10H009LCG , DMT10H010LK3 , DMT10H010LSS , DMT10H015LPS , DMT10H015LSS , DMT3002LPS , DMT3006LFV , DMT3006LPS , 2SK3568 , DMT3009LFVW , DMT3020LFDB , DMT3020LFDF , DMT3020LSD , DMT31M6LPS , DMT32M5LFG , DMT32M5LPS , DMT4002LPS .
History: P0908AT | NVB5404N | 2SK2820 | SUD50N02-06 | SWB076R68E7T | BL8N60-A | 10N65AF
History: P0908AT | NVB5404N | 2SK2820 | SUD50N02-06 | SWB076R68E7T | BL8N60-A | 10N65AF



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