Справочник MOSFET. DMT4002LPS

 

DMT4002LPS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DMT4002LPS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 22.9 ns
   Cossⓘ - Выходная емкость: 2165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
   Тип корпуса: POWERDI5060-8
     - подбор MOSFET транзистора по параметрам

 

DMT4002LPS Datasheet (PDF)

 ..1. Size:399K  diodes
dmt4002lps.pdfpdf_icon

DMT4002LPS

DMT4002LPS Green40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) max TC = +25C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 1.8m @ VGS = 10V 100A Low RDS(ON) Minimizes

 8.1. Size:436K  diodes
dmt4003sct.pdfpdf_icon

DMT4002LPS

DMT4003SCT Green40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production ID BVDSS RDS(ON) Ensures More Reliable and Robust End Application TC = +25C Low Input Capacitance 40V 3m @VGS = 10V 205A High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finis

 8.2. Size:264K  diodes
dmt4005sct.pdfpdf_icon

DMT4002LPS

DMT4005SCT 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching ensures more reliable and robust end application ID BVDSS RDS(ON) max Low Input Capacitance TC = +25C Low Input/Output Leakage 40V 4.7m @ VGS = 10V 100A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 8.3. Size:261K  inchange semiconductor
dmt4003sct.pdfpdf_icon

DMT4002LPS

isc N-Channel MOSFET Transistor DMT4003SCTFEATURESDrain Current I = 205A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: PHB95N03LT | RF4C050AP | FDA24N50F | 2N6756JANTX | STP36N05LFI | SSF80N06A | SVF4N60RDM

 

 
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