Справочник MOSFET. DMT4002LPS

 

DMT4002LPS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMT4002LPS
   Маркировка: T4002LS
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 104 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 100 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 116.1 nC
   Время нарастания (tr): 22.9 ns
   Выходная емкость (Cd): 2165 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0018 Ohm
   Тип корпуса: POWERDI5060-8

 Аналог (замена) для DMT4002LPS

 

 

DMT4002LPS Datasheet (PDF)

 ..1. Size:399K  diodes
 dmt4002lps.pdf

DMT4002LPS DMT4002LPS

DMT4002LPS Green40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) max TC = +25C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 1.8m @ VGS = 10V 100A Low RDS(ON) Minimizes

 8.1. Size:436K  diodes
 dmt4003sct.pdf

DMT4002LPS DMT4002LPS

DMT4003SCT Green40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production ID BVDSS RDS(ON) Ensures More Reliable and Robust End Application TC = +25C Low Input Capacitance 40V 3m @VGS = 10V 205A High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finis

 8.2. Size:264K  diodes
 dmt4005sct.pdf

DMT4002LPS DMT4002LPS

DMT4005SCT 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching ensures more reliable and robust end application ID BVDSS RDS(ON) max Low Input Capacitance TC = +25C Low Input/Output Leakage 40V 4.7m @ VGS = 10V 100A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 8.3. Size:261K  inchange semiconductor
 dmt4003sct.pdf

DMT4002LPS DMT4002LPS

isc N-Channel MOSFET Transistor DMT4003SCTFEATURESDrain Current I = 205A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 8.4. Size:260K  inchange semiconductor
 dmt4005sct.pdf

DMT4002LPS DMT4002LPS

isc N-Channel MOSFET Transistor DMT4005SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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