DMTH6009LK3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMTH6009LK3
Маркировка: H6009L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 60 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 59 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 33.5 nC
Время нарастания (tr): 8.6 ns
Выходная емкость (Cd): 438 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm
Тип корпуса: TO252
Аналог (замена) для DMTH6009LK3
DMTH6009LK3 Datasheet (PDF)
dmth6009lk3.pdf
DMTH6009LK3 Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Max BVDSS RDS(ON) Max TC = +25 Environments C Low RDS(ON) Ensures on State Losses are Minimized 10m @ VGS = 10V 59A Excellent Qgd x RDS(ON) Product (FOM) 60V Advanced Technology for DC/DC Converter
dmth6009lk3q.pdf
DMTH6009LK3Q Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C ideal for high ambient temperature ID Max BVDSS RDS(ON) Max TC = +25C environments Low RDS(ON) Ensures On State Losses Are Minimized 10m @ VGS = 10V 59A Excellent Qgd x RDS(ON) Product (FOM) 60V Advanced Technology for DC/DC Converters 1
dmth6002lps-13.pdf
DMTH6002LPS Green60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 2m @ VGS = 10V 100A and Robust End Application 60V 3m @ VGS = 6V
dmth6002lps.pdf
DMTH6002LPS Green60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 2m @ VGS = 10V 100A and Robust End Application 60V 3m @ VGS = 6V
dmth6005lct.pdf
DMTH6005LCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures more Reliable 6m @ VGS = 10V 100A 60V and Robust End Application 85A 10m @ VGS = 4.5V Low Input Capacitance Low
dmth6004sk3q.pdf
GreenDMTH6004SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature Environments BVDSS RDS(ON) Max QG Typ TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 10) and Robust End Application 95.4nC 60V 3.8m @ VGS = 10V 100A Low RDS(ON) M
dmth6004sct.pdf
DMTH6004SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Max TC = +25C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
dmth6005lk3q.pdf
GreenDMTH6005LK3Q 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switching ensures more reliable 60V 5.6m @ VGS = 10V 90A and robust end application Low RDS(ON) minimizes power losses Lo
dmth6004sk3.pdf
GreenDMTH6004SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal For High Ambient Temperature ID Max Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 60V 3.8m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses
dmth6004sctb.pdf
DMTH6004SCTB Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 60V 3.4m @ VGS = 10V 100A and Robust End Application Low RDS(ON) Minimizes Power Losses
dmth6005lct.pdf
isc N-Channel MOSFET Transistor DMTH6005LCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmth6004sct.pdf
isc N-Channel MOSFET Transistor DMTH6004SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmth6004sctb.pdf
isc N-Channel MOSFET Transistor DMTH6004SCTBFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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