DMG7N65SCTI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMG7N65SCTI
Маркировка: 7N65SCT
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 28 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 7.7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 25.2 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 63 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
Тип корпуса: TO220F
Аналог (замена) для DMG7N65SCTI
DMG7N65SCTI Datasheet (PDF)
dmg7n65scti.pdf
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DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package TC = +25 High BVDSS Rating for Power Application C ITO220AB Low Input/Output Leakage 650V 1.4@VGS = 10V 7.7A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descrip
dmg7n65scti.pdf
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isc N-Channel MOSFET Transistor DMG7N65SCTIFEATURESDrain Current I = 7.7A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmg7n65sct.pdf
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DMG7N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID BV R DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 650V 1.4@V = 10V 7.7A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automo
dmg7n65sct.pdf
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isc N-Channel MOSFET Transistor DMG7N65SCTFEATURESDrain Current I = 7.7A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
dmg7n65sj3.pdf
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DMG7N65SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I DBV R DSS DS(ON) Max High BV Rating for Power Application DSST = +25C C Low Input Capacitance 650V 1.4 @ V = 10V 5.5A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automot
dmg7n65sj3.pdf
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isc N-Channel MOSFET Transistor DMG7N65SJ3FEATURESDrain Current I = 5.5A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![DMG7N65SCTI](https://alltransistors.com/images/us.png)
![DMG7N65SCTI](https://alltransistors.com/images/es.png)
![DMG7N65SCTI](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C