Справочник MOSFET. DMJ70H1D5SV3

 

DMJ70H1D5SV3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMJ70H1D5SV3
   Маркировка: 4N70SV
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.8 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 124 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO251

 Аналог (замена) для DMJ70H1D5SV3

 

 

DMJ70H1D5SV3 Datasheet (PDF)

 ..1. Size:493K  diodes
 dmj70h1d5sv3.pdf

DMJ70H1D5SV3 DMJ70H1D5SV3

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D5SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre

 ..2. Size:274K  inchange semiconductor
 dmj70h1d5sv3.pdf

DMJ70H1D5SV3 DMJ70H1D5SV3

isc N-Channel MOSFET Transistor DMJ70H1D5SV3FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.1. Size:494K  diodes
 dmj70h1d0sv3.pdf

DMJ70H1D5SV3 DMJ70H1D5SV3

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D0SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.0 @ VGS = 10V 6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 6.2. Size:515K  diodes
 dmj70h1d4sv3.pdf

DMJ70H1D5SV3 DMJ70H1D5SV3

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D4SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 6.3. Size:506K  diodes
 dmj70h1d3sh3.pdf

DMJ70H1D5SV3 DMJ70H1D5SV3

PART OBSOLETE - NO ALTERNATE PART DMJ70H1D3SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.3 @ VGS = 10V 4.6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

 6.4. Size:274K  inchange semiconductor
 dmj70h1d0sv3.pdf

DMJ70H1D5SV3 DMJ70H1D5SV3

isc N-Channel MOSFET Transistor DMJ70H1D0SV3FEATURESDrain Current I = 6.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.5. Size:274K  inchange semiconductor
 dmj70h1d4sv3.pdf

DMJ70H1D5SV3 DMJ70H1D5SV3

isc N-Channel MOSFET Transistor DMJ70H1D4SV3FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.6. Size:273K  inchange semiconductor
 dmj70h1d3sh3.pdf

DMJ70H1D5SV3 DMJ70H1D5SV3

isc N-Channel MOSFET Transistor DMJ70H1D3SH3FEATURESDrain Current I = 4.6A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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