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DMTH10H005SCT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMTH10H005SCT
   Маркировка: TH1H005S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 187 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 140 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 111.7 nC
   trⓘ - Время нарастания: 30.3 ns
   Cossⓘ - Выходная емкость: 1608 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для DMTH10H005SCT

 

 

DMTH10H005SCT Datasheet (PDF)

 ..1. Size:513K  diodes
 dmth10h005sct.pdf

DMTH10H005SCT DMTH10H005SCT

GreenDMTH10H005SCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) TC = +25C Environments 100V 5m @VGS = 10V 140A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description High BVDSS

 ..2. Size:260K  inchange semiconductor
 dmth10h005sct.pdf

DMTH10H005SCT DMTH10H005SCT

isc N-Channel MOSFET Transistor DMTH10H005SCTFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:414K  diodes
 dmth10h005lct.pdf

DMTH10H005SCT DMTH10H005SCT

GreenDMTH10H005LCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Environments TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 100V 5m @VGS = 10V 140A and Robust End Application Low Input Capacitance Description High BVD

 4.2. Size:260K  inchange semiconductor
 dmth10h005lct.pdf

DMTH10H005SCT DMTH10H005SCT

isc N-Channel MOSFET Transistor DMTH10H005LCTFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.1. Size:382K  diodes
 dmth10h010lct.pdf

DMTH10H005SCT DMTH10H005SCT

DMTH10H010LCT 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Package Environments TC = +25C Low Input Capacitance 100V 9.5m @VGS = 10V TO220AB 108A High BVDSS Rating for Power Application Low Input/Output Leakage Description Lead-Free Finish;

 6.2. Size:420K  diodes
 dmth10h010sct.pdf

DMTH10H005SCT DMTH10H005SCT

GreenDMTH10H010SCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Package TC = +25C High BVDSS Rating for Power Application 100V 9.5m @VGS = 10V TO220AB 100A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note

 6.3. Size:261K  inchange semiconductor
 dmth10h010lct.pdf

DMTH10H005SCT DMTH10H005SCT

isc N-Channel MOSFET Transistor DMTH10H010LCTFEATURESDrain Current I = 108A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.4. Size:261K  inchange semiconductor
 dmth10h010sct.pdf

DMTH10H005SCT DMTH10H005SCT

isc N-Channel MOSFET Transistor DMTH10H010SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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