FIR12N65FG - аналоги, параметры транзистора - Справочник транзисторов

FIR12N65FG даташит

..1. Size:1752K first semi
fir12n65fg.pdf pdf_icon

FIR12N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=650V(Min.) Low Crss Crss=14.6pF(Typ.) G Low gate charge Qg=41nC(Typ.) D S Low RDS(on) RDS(on)=0.65 (Max.) D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR12N65F FIR12N65F = Specific Device C

7.1. Size:1825K first semi
fir12n60fg.pdf pdf_icon

FIR12N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features BVDDS=600V (Min.) Low gate charge Qg=41nC (Typ.) Low drain-source On resistance RDS(on)=0.65 (Max.) G D S 100% avalanche tested RoHS compliant device D G S Marking Diagram Y = Year A = Assembly Location WW = Work Week YAWW FIR12N60F = Specif

8.1. Size:1619K first semi
fir12n15lg.pdf pdf_icon

FIR12N15LG 150V N-Channel MOSFET-D PIN Connection TO-252(D-PAK) Features Low Intrinsic Capacitances. D Excellent Switching Characteristics. Extended Safe Operating Area. G Unrivalled Gate Charge Qg= 15.5nC (Typ.). S BVDSS=150V,ID=12A RDS(on) 0.29 (Max) @VG=10V g Schematic dia ram 100% Avalanche Tested D G S Marking Diagram YAWWVT Y =

8.2. Size:3579K first semi
fir12n70fg.pdf pdf_icon

FIR12N70FG 700V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 44nC (Typ.). BVDSS=700V,ID=12A G DS RDS(on) 0.75 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc