FIR20N65AFGPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=75 nC (Typ.). BVDSS=650V,ID=20A G RDS(on) : 0.42 (Max) @VG=10VD S 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly LocationWW = Work

FIR20N65FGN-Channel Power MOSFET-XPIN Connection TO-220FVDSS 650 VID 20 APD(TC=25) 85 WRDS(ON)Typ 0.45GFeaturesDS Fast SwitchinggSchematic dia ram Low ON Resistance(Rdson 0.45 )D Low Gate Charge (Typical Data:65nC) Low Reverse transfer capacitances(Typical: 20pG 100% Single Pulse avalanche energy TestSApplicationsPower switch circuit of adapt

FIR20N60FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 20 APD(TC=25 ) 250 WRDS(ON) 0.35 G FeaturesD S Fast SwitchinggSchematic dia ram Low ON Resistance(Rdso D Low Gate Charge (Typical Data:70nC) Low Reverse transfer capacitances(Typical: 32pF)G 100% Single Pulse avalanche energy TestS ApplicationsMarking Diagr

FIR20NS65AFG20A,650V DP MOS Power Transistor-SPIN Connection TO-220FGENERAL DESCRIPTIONFIR20NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. Itachieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power G D S density, and superior the

FIR20N06LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252Description TheFIR20N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

FIR20N15LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252Description The FIR20N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

FIR20N50FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FGeneral DescriptionFIR20N50FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superi

FIR20N10LGAdvanced N-Ch Power MOSFET-DPIN Connection TO-252(D-PAK)Features: Low Intrinsic Capacitances.D Excellent Switching Characteristics. Extended Safe Operating Area.G Unrivalled Gate Charge :Qg= 31nC (Typ.).S BVDSS=100V,ID= 20A RDS(on) : 0.07 (Max) @VG=10VgSchematic dia ram 100% Avalanche TestedD G S Marking DiagramY = Year