Справочник MOSFET. 2SK1824

 

2SK1824 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1824
   Маркировка: B1
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.2 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 7 V
   Минимальное напряжение отсечки |Vgs(off)|: 0.8 V
   Максимально допустимый постоянный ток стока |Id|: 0.1 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 20 ns
   Выходная емкость (Cd): 14 pf
   Сопротивление сток-исток открытого транзистора (Rds): 8 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для 2SK1824

 

 

2SK1824 Datasheet (PDF)

 ..1. Size:60K  1
2sk1824.pdf

2SK1824
2SK1824

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1824N-CHANNEL MOS FETFOR SWITCHINGThe 2SK1824 is a N-channel vertical type MOS FET that isPACKAGE DIMENSIONS (in mm)driven at 2.5 V.0.3 0.05 0.1+0.10.05Because this MOS FET can be driven on a low voltage andbecause it is not necessary to consider the drive current, the2SK1824 is ideal for driving the actuator of power-saving

 8.1. Size:294K  toshiba
2sk1827.pdf

2SK1824
2SK1824

2SK1827 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteristics Sy

 8.2. Size:294K  toshiba
2sk1825.pdf

2SK1824
2SK1824

2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Equivalent Circuit JEDEC Maximum Ratings (Ta == 25C) ==JEITA Characteristics Symbol Rat

 8.3. Size:318K  toshiba
2sk1828.pdf

2SK1824
2SK1824

2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC TO-236MODJEITA SC-59TOSHIBA 2-3F1FWeight: 0.012 g (typ.) Maximum Ra

 8.4. Size:319K  toshiba
2sk1826.pdf

2SK1824
2SK1824

2SK1826 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC TO-236MODMaximum Ratings (Ta == 25C) ==JEITA SC-59Characteristi

 8.5. Size:291K  toshiba
2sk1829.pdf

2SK1824
2SK1824

2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteristics

 8.6. Size:155K  fuji
2sk1821-01m.pdf

2SK1824
2SK1824

N-channel MOS-FET2SK1821-01MFAP-IIA Series 600V 6,5 2A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

 8.7. Size:1040K  kexin
2sk1828-3.pdf

2SK1824
2SK1824

SMD Type MOSFETN-Channel MOSFET2SK1828SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 50mA1 2 RDS(ON) 40 (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-So

 8.8. Size:1031K  kexin
2sk1828.pdf

2SK1824
2SK1824

SMD Type MOSFETN-Channel MOSFET2SK1828SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = 20V1 2 ID = 50mA+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 40 (VGS = 2.5V) Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V

 8.9. Size:214K  inchange semiconductor
2sk1821.pdf

2SK1824
2SK1824

isc N-Channel MOSFET Transistor 2SK1821DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulator and motor driveDC-DC convertersUPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Другие MOSFET... 2SK1758 , 2SK1760 , 2SK1784 , 2SK1785 , 2SK1793 , 2SK1794 , 2SK1795 , 2SK1796 , IRF540N , 2SK1850 , 2SK1851 , 2SK1852 , 2SK1853 , 2SK1917-MR , 2SK193 , 2SK195 , 2SK1953 .

 

 
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