HF12N60 - аналоги, параметры транзистора - Справочник транзисторов

HF12N60 даташит

..1. Size:1256K haolin elec
hf12n60.pdf pdf_icon

Nov 2007 BVDSS = 600 V RDS(on) typ = 0.53 HF12N60 ID = 12 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Extended Safe Operati

0.1. Size:168K vishay
sihf12n60e.pdf pdf_icon

SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced Switching and Conduction Losses Qg max. (nC) 58 Ultra Low Gate Charge (Qg) Qgs (nC) 6 Avalanche Energy Rated (UIS) Qgd (nC) 13

0.2. Size:784K feihonltd
fhp12n60a fhf12n60a.pdf pdf_icon

N N-CHANNEL MOSFET FHP12N60A/ FHF12N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 600V Fast switching Rdson-typ 0.6 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt Im

8.1. Size:134K vishay
sihf12n65e.pdf pdf_icon

SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Qg max. (nC) 70 Ultra low gate charge (Qg) Qgs (nC) 9 Avalanche energy rated (UIS) Qgd (nC) 16 M