SSS4N60AS - аналоги, параметры транзистора - Справочник транзисторов

SSS4N60AS даташит

..1. Size:501K samsung
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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 2.037 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

7.1. Size:888K fairchild semi
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SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switchi

7.2. Size:26K samsung
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7.3. Size:1214K shenzhen
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60 Technology co.,Ltd 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance

Другие MOSFET... SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , SSS4N55 , SSS4N60 , AON6414A , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A , SSS6N55 , SSS6N60 .