SSS5N80A - аналоги, параметры транзистора - Справочник транзисторов

SSS5N80A даташит

..1. Size:502K samsung
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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.824 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings S

9.1. Size:499K samsung
sss5n90a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 2.300 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

9.2. Size:1128K shenzhen
sss5n60.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N60 SSS5N60 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Другие MOSFET... SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , 7N65 , SSS5N90A , SSS6N55 , SSS6N60 , SSS6N70A , SSS6N80A , SSS6N90A , SSS70N10A , SSS7N60A .