HYG060N08NS1D - описание и поиск аналогов

 

Аналоги HYG060N08NS1D. Основные параметры


   Наименование производителя: HYG060N08NS1D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 69 ns
   Cossⓘ - Выходная емкость: 1150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для HYG060N08NS1D

   - подбор ⓘ MOSFET транзистора по параметрам

 

HYG060N08NS1D даташит

 ..1. Size:871K  hymexa
hyg060n08ns1d hyg060n08ns1u hyg060n08ns1v.pdfpdf_icon

HYG060N08NS1D

HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/80A RDS(ON)=5.7 m (typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D S G D G Lead-Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L TO-251-3S Applications Switching application Power management for inverter systems N-Ch

 2.1. Size:627K  hymexa
hyg060n08ns1p hyg060n08ns1b.pdfpdf_icon

HYG060N08NS1D

HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/105A RDS(ON)=5.5 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET

 8.1. Size:934K  hymexa
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdfpdf_icon

HYG060N08NS1D

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m (typ.) @VGS = -10V RDS(ON)= 8.5 m (typ.) @VGS = -4.5V S D S G D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching

 9.1. Size:1408K  hymexa
hyg065n15ns1p hyg065n15ns1b.pdfpdf_icon

HYG060N08NS1D

HYG065N15NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/165A RDS(ON)=6.2m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Pa

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