HYG060P04LQ1U Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HYG060P04LQ1U
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 47 ns
Cossⓘ - Выходная емкость: 431 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: TO251
Аналог (замена) для HYG060P04LQ1U
HYG060P04LQ1U Datasheet (PDF)
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching
hyg060n08ns1p hyg060n08ns1b.pdf

HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/105A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET
hyg060n08ns1d hyg060n08ns1u hyg060n08ns1v.pdf

HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/80A RDS(ON)=5.7 m(typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D SG D GLead-Free and Green Devices Available SD (RoHS Compliant) GTO-252-2L TO-251-3L TO-251-3S Applications Switching application Power management for inverter systems N-Ch
hyg065n15ns1p hyg065n15ns1b.pdf

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa
Другие MOSFET... HYG050N08NS1B , HYG050N13NS1B6 , HYG060N08NS1D , HYG060N08NS1U , HYG060N08NS1V , HYG060N08NS1P , HYG060N08NS1B , HYG060P04LQ1D , 10N65 , HYG060P04LQ1V , HYG064N08NA1P , HYG064N08NA1B , HYG065N07NS1D , HYG065N07NS1U , HYG065N07NS1V , HYG065N07NS1P , HYG065N07NS1B .
History: MEE2348-G | NP90N04PDH
History: MEE2348-G | NP90N04PDH



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