HSM4006
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HSM4006
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.5
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 12
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 18.8
nC
trⓘ -
Время нарастания: 2.6
ns
Cossⓘ - Выходная емкость: 193
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075
Ohm
Тип корпуса:
SOP8
Аналог (замена) для HSM4006
HSM4006
Datasheet (PDF)
..1. Size:424K huashuo
hsm4006.pdf HSM4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSM4006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 12 A The HSM4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
8.1. Size:2050K huashuo
hsm4004.pdf HSM4004 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4004 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 10 A The HSM4004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit
8.2. Size:2141K huashuo
hsm4002.pdf HSM4002 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4002 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 28 m gate charge for most of the synchronous buck converter applications. ID 7.5 A The HSM4002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
9.1. Size:715K huashuo
hsm4094.pdf HSM4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 24 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications SOP-8 Pin Configuration SMPS Synchronous Rectification DC/DC Converters
9.2. Size:742K huashuo
hsm4062.pdf HSM4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 9.5 A Applications Power Management Functions SOP8 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Rating
9.3. Size:778K huashuo
hsm4052.pdf HSM4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 14 A The HSM4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi
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