Справочник MOSFET. HSM4006

 

HSM4006 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HSM4006
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 12 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 18.8 nC
   Время нарастания (tr): 2.6 ns
   Выходная емкость (Cd): 193 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0075 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для HSM4006

 

 

HSM4006 Datasheet (PDF)

 ..1. Size:424K  huashuo
hsm4006.pdf

HSM4006
HSM4006

HSM4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSM4006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 12 A The HSM4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 8.1. Size:2050K  huashuo
hsm4004.pdf

HSM4006
HSM4006

HSM4004 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4004 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 10 A The HSM4004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

 8.2. Size:2141K  huashuo
hsm4002.pdf

HSM4006
HSM4006

HSM4002 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4002 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 28 m gate charge for most of the synchronous buck converter applications. ID 7.5 A The HSM4002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

 9.1. Size:715K  huashuo
hsm4094.pdf

HSM4006
HSM4006

HSM4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 24 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications SOP-8 Pin Configuration SMPS Synchronous Rectification DC/DC Converters

 9.2. Size:742K  huashuo
hsm4062.pdf

HSM4006
HSM4006

HSM4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 9.5 A Applications Power Management Functions SOP8 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Rating

 9.3. Size:778K  huashuo
hsm4052.pdf

HSM4006
HSM4006

HSM4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 14 A The HSM4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

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