Справочник MOSFET. HSP6016

 

HSP6016 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HSP6016
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 86.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 28.7 nC
   trⓘ - Время нарастания: 9.2 ns
   Cossⓘ - Выходная емкость: 210 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO220

 Аналог (замена) для HSP6016

 

 

HSP6016 Datasheet (PDF)

 ..1. Size:501K  huashuo
 hsp6016.pdf

HSP6016 HSP6016

HSP6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6016 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 12 m buck converter applications. ID 60 A The HSP6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

 9.1. Size:572K  huashuo
 hsp6040.pdf

HSP6016 HSP6016

HSP6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSP6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

 9.2. Size:742K  huashuo
 hsp6032a.pdf

HSP6016 HSP6016

HSP6032A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6032A is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 7.1 m converter applications. ID 75 A The HSP6032A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 9.3. Size:819K  huashuo
 hsp6048.pdf

HSP6016 HSP6016

HSP6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6048 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 3 m converter applications. ID 150 A The HSP6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability

 9.4. Size:551K  huashuo
 hsp6024a.pdf

HSP6016 HSP6016

HSP6024A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6024A is the high cell density trenched VDS 60 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 4.8 m synchronous buck converter applications. ID 200 A The HSP6024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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