Справочник MOSFET. HSS2302B

 

HSS2302B Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HSS2302B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.71 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 39 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: SOT23S
     - подбор MOSFET транзистора по параметрам

 

HSS2302B Datasheet (PDF)

 ..1. Size:420K  huashuo
hss2302b.pdfpdf_icon

HSS2302B

HSS2302B N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSS2302B is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 46 m power switching and load switch applications. ID 3 A The HSS2302B meets the RoHS and Green Product requirement with full function reliability ap

 7.1. Size:475K  huashuo
hss2302a.pdfpdf_icon

HSS2302B

HSS2302A N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSS2302A is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 30 m power switching and load switch applications. ID 3.6 A The HSS2302A meets the RoHS and Green Product requirement with full function reliability

 8.1. Size:487K  huashuo
hss2306a.pdfpdf_icon

HSS2302B

HSS2306A N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS2306A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. The HSS2306A meet the RoHS and Green Product ID 4.6 A requirement with full function reliability appr

 8.2. Size:483K  huashuo
hss2308a.pdfpdf_icon

HSS2302B

HSS2308A N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSS2308A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 100 m and efficiency for most of the small power switching and load switch applications. ID 2.3 A The HSS2308A meet the RoHS and Green Product requirement with full function reliability app

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STFI15N60M2-EP | SIHG47N60S | IRL2505L | 9N95 | KO3413 | FS40SM-5 | HGI110N08AL

 

 
Back to Top

 


 
.