HSS2302B - описание и поиск аналогов

 

HSS2302B. Аналоги и основные параметры

Наименование производителя: HSS2302B

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.71 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 39 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm

Тип корпуса: SOT23S

Аналог (замена) для HSS2302B

- подборⓘ MOSFET транзистора по параметрам

 

HSS2302B даташит

 ..1. Size:420K  huashuo
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HSS2302B

HSS2302B N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSS2302B is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 46 m power switching and load switch applications. ID 3 A The HSS2302B meets the RoHS and Green Product requirement with full function reliability ap

 7.1. Size:475K  huashuo
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HSS2302B

HSS2302A N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSS2302A is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 30 m power switching and load switch applications. ID 3.6 A The HSS2302A meets the RoHS and Green Product requirement with full function reliability

 8.1. Size:487K  huashuo
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HSS2302B

HSS2306A N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS2306A is the high cell density trenched N- VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. The HSS2306A meet the RoHS and Green Product ID 4.6 A requirement with full function reliability appr

 8.2. Size:483K  huashuo
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HSS2302B

HSS2308A N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSS2308A is the high cell density trenched N- ch MOSFETs, which provides excellent RDSON RDS(ON),max 100 m and efficiency for most of the small power switching and load switch applications. ID 2.3 A The HSS2308A meet the RoHS and Green Product requirement with full function reliability app

Другие MOSFET... HSS0008 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , IRF2807 , HSS2305A , HSS2306A , HSS2307 , HSS2307A , HSS2308A , HSS2310A , HSS2312A , HSS2319 .

History: MMBF4091 | FMM150-0075X2F

 

 

 


 
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