Справочник MOSFET. HSS2333

 

HSS2333 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HSS2333
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 680 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для HSS2333

   - подбор ⓘ MOSFET транзистора по параметрам

 

HSS2333 Datasheet (PDF)

 ..1. Size:936K  huashuo
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HSS2333

HSS2333 P-Ch 12V Fast Switching MOSFETs Description Product Summary The HSS233 is the high cell density trenched P-ch VDS -12 V MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 15.3 m converter applications. ID -8 A The HSS2333 meet the RoHS and Green Product requirement with full function reliability approved. S

 9.1. Size:482K  huashuo
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HSS2333

HSS2310A N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSS2310A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 80 m and efficiency for most of the small power switching and load switch applications. ID 2.3 A The HSS2310A meet the RoHS and Green Product requirement with full function reliability appr

 9.2. Size:487K  huashuo
hss2306a.pdfpdf_icon

HSS2333

HSS2306A N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS2306A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. The HSS2306A meet the RoHS and Green Product ID 4.6 A requirement with full function reliability appr

 9.3. Size:483K  huashuo
hss2308a.pdfpdf_icon

HSS2333

HSS2308A N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSS2308A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 100 m and efficiency for most of the small power switching and load switch applications. ID 2.3 A The HSS2308A meet the RoHS and Green Product requirement with full function reliability app

Другие MOSFET... HSS2305A , HSS2306A , HSS2307 , HSS2307A , HSS2308A , HSS2310A , HSS2312A , HSS2319 , IRFZ48N , HSS2607 , HSS2N7002K , HSS2P10 , HSS3400A , HSS3401A , HSS3402A , HSS3404A , HSS3407A .

History: AP9971AGM | AP6P070S | NCE65NF068T | IXFH18N60P | AM4844NE | SL50N06D | APT4080BN

 

 
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