Справочник MOSFET. HSU0004

 

HSU0004 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HSU0004
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8.2 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.112 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

HSU0004 Datasheet (PDF)

 ..1. Size:536K  huashuo
hsu0004.pdfpdf_icon

HSU0004

HSU0004 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSU0004 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 112 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 12 A applications . The HSU0004 meet the RoHS and Green Product requirement, 100% EAS guara

 9.1. Size:704K  huashuo
hsu0026.pdfpdf_icon

HSU0004

HSU0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 16 m gate charge for most of the synchronous buck converter applications. ID 40 A The HSU0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

 9.2. Size:610K  huashuo
hsu0048.pdfpdf_icon

HSU0004

HSU0048 N-Ch 100V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Low RDS(ON) VDS 100 V Low Gate Charge RoHs and Halogen-Free Compliant RDS(ON),TYP 6.6 m ID 73 A Description TO252 Pin Configuration The HSU0048 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rec

 9.3. Size:570K  huashuo
hsu0018a.pdfpdf_icon

HSU0004

HSU0018A Description Product Summary The HSU0018A is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 22 m and gate charge for most of the synchronous buck converter applications. ID 45 A The HSU0018A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Con

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History: STF8236 | CHM8207JGP

 

 
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