Справочник MOSFET. HSU60N02

 

HSU60N02 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HSU60N02
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 83 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HSU60N02

 

 

HSU60N02 Datasheet (PDF)

 ..1. Size:1455K  huashuo
hsu60n02.pdf

HSU60N02
HSU60N02

HSU60N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU60N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSU60N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

 9.1. Size:494K  huashuo
hsu6004.pdf

HSU60N02
HSU60N02

HSU6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DSThe HSU6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),maxRDSON and gate charge for most of the synchronous buck converter applications. I 23 A DThe HSU6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.2. Size:477K  huashuo
hsu60p03.pdf

HSU60N02
HSU60N02

HSU60P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU60P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.5 m gate charge for most of the synchronous buck converter applications. ID -60 A The HSU60P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 9.3. Size:2275K  huashuo
hsu6014.pdf

HSU60N02
HSU60N02

HSU6014 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSU6014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 40 m gate charge for most of the synchronous buck converter applications. ID 20 A The HSU6014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

 9.4. Size:469K  huashuo
hsu6006.pdf

HSU60N02
HSU60N02

HSU6006 N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSU6006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDS(ON),max 20 m RDSON and gate charge for most of the synchronous buck converter applications. ID 35 A The HSU6006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

 9.5. Size:700K  huashuo
hsu6008.pdf

HSU60N02
HSU60N02

HSU6008 N-Ch 60V Fast Switching MOSFETs Product Summary Description V 60 V DSThe HSU6008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON R 100 m DS(ON),maxand efficiency for most of the small power switching and load switch applications. I 10 A DThe HSU6008 meet the RoHS and Green Product requirement with full function reliability a

 9.6. Size:2276K  huashuo
hsu6040.pdf

HSU60N02
HSU60N02

HSU6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSU6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 112 A The HSU6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

 9.7. Size:2407K  huashuo
hsu6032.pdf

HSU60N02
HSU60N02

HSU6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSU6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 8.5 m converter applications. ID 75 A The HSU6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

 9.8. Size:626K  huashuo
hsu6002.pdf

HSU60N02
HSU60N02

HSU6002 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSU6002 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 70 m DS(ON),maxconverter applications. I 17 A DThe HSU6002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 9.9. Size:519K  huashuo
hsu60p02.pdf

HSU60N02
HSU60N02

HSU60P02 P-Ch 20V Fast Switching MOSFETs Description Product Summary VDS -20 V The HSU60P02 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),typ 6.6 m RDSON and gate charge for most of the synchronous buck converter applications. ID -60 A The HSU60P02 meet the RoHS and Green Product requirement with full function reliability approved.

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