Справочник MOSFET. HSU60P03

 

HSU60P03 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HSU60P03
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 52.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17.8 ns
   Cossⓘ - Выходная емкость: 508 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

HSU60P03 Datasheet (PDF)

 ..1. Size:477K  huashuo
hsu60p03.pdfpdf_icon

HSU60P03

HSU60P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU60P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.5 m gate charge for most of the synchronous buck converter applications. ID -60 A The HSU60P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 7.1. Size:519K  huashuo
hsu60p02.pdfpdf_icon

HSU60P03

HSU60P02 P-Ch 20V Fast Switching MOSFETs Description Product Summary VDS -20 V The HSU60P02 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),typ 6.6 m RDSON and gate charge for most of the synchronous buck converter applications. ID -60 A The HSU60P02 meet the RoHS and Green Product requirement with full function reliability approved.

 9.1. Size:494K  huashuo
hsu6004.pdfpdf_icon

HSU60P03

HSU6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DSThe HSU6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),maxRDSON and gate charge for most of the synchronous buck converter applications. I 23 A DThe HSU6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.2. Size:1455K  huashuo
hsu60n02.pdfpdf_icon

HSU60P03

HSU60N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU60N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSU60N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTLUS3A40PZTBG | R6535KNZ1 | SWD051R08ES | VSE002N03MS-G | DMP6185SK3 | CS840 | 2SK3430-ZJ

 

 
Back to Top

 


 
.