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SVF7N80T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SVF7N80T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 154 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 71.67 ns
   Cossⓘ - Выходная емкость: 104 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.55 Ohm
   Тип корпуса: TO220

 Аналог (замена) для SVF7N80T

 

 

SVF7N80T Datasheet (PDF)

 ..1. Size:392K  silan
 svf7n80t svf7n80f svf7n80kl svf7n80k svf7n80fd.pdf

SVF7N80T SVF7N80T

SVF7N80T/F/KL/K/FD 7A800V N 2SVF7N80T/F/KL/K/FD N MOS F-CellTM VDMOS 11 233TO-220F-3L

 ..2. Size:520K  silan
 svf7n80t svf7n80f.pdf

SVF7N80T SVF7N80T

SVF7N80T/F 7A800V N 2SVF7N80T/F NMOSF-CellTMVDMOS 1 3 AC-DC

 9.1. Size:407K  silan
 svf7n65f svf7n65s svf7n65str svf7n65t.pdf

SVF7N80T SVF7N80T

SVF7N65T/F/S 7A650V N 2 SVF7N65T/F/S N MOS 1 F-CellTM VDMOS 31. 2. 3.

 9.2. Size:512K  silan
 svf7n60f svf7n60s svf7n60d.pdf

SVF7N80T SVF7N80T

SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC

 9.3. Size:783K  silan
 svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf

SVF7N80T SVF7N80T

SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS

 9.4. Size:452K  silan
 svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf

SVF7N80T SVF7N80T

SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3

 9.5. Size:321K  silan
 svf7n65cfjh.pdf

SVF7N80T SVF7N80T

SVF7N65CFJH 7A650V N 2SVF7N65CFJH N MOS F-CellTM VDMOS 13

 9.6. Size:626K  silan
 svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65cs svf7n65cfq.pdf

SVF7N80T SVF7N80T

SVF7N65CF/D/MJ/K/S/FQ 7A650V N SVF7N65CF/D/MJ/K/S/FQ N MOS F-CellTM VDMOS

 9.7. Size:575K  silan
 svf7n65t svf7n65f svf7n65s.pdf

SVF7N80T SVF7N80T

SVF7N65T/F/S 7A650V N SVF7N65T/F/S N MOS F-CellTM VDMOS AC-DC

 9.8. Size:623K  silan
 svf7n65f-t.pdf

SVF7N80T SVF7N80T

SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 9.9. Size:641K  silan
 svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65ct.pdf

SVF7N80T SVF7N80T

SVF7N65CF/D/MJ/K/T 7A650V N 2SVF7N65CF/D/MJ/K/T N MOS 1 F-CellTM VDMOS 123 TO-262-3L3

 9.10. Size:527K  silan
 svf7n65cf svf7n65cdtr svf7n65cmj svf7n65cmjl svf7n65ck svf7n65ct.pdf

SVF7N80T SVF7N80T

SVF7N65CF/D/MJ/MJL/K/T 7A650V N 2 1SVF7N65CF/D/MJ/MJL/K/T N MOS 231 F-CellTM VDMOS TO-262-3L3 12

 9.11. Size:627K  silan
 svf7n60t svf7n60f.pdf

SVF7N80T SVF7N80T

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

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