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BSC014N06NSSC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSC014N06NSSC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 1500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0014 Ohm
   Тип корпуса: WSON-8-2

 Аналог (замена) для BSC014N06NSSC

 

 

BSC014N06NSSC Datasheet (PDF)

 ..1. Size:976K  infineon
bsc014n06nssc.pdf

BSC014N06NSSC BSC014N06NSSC

BSC014N06NSSCMOSFETPG-WSON-8-2OptiMOSTM Power-Transistor, 60 VFeatures Double side cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-free ac

 3.1. Size:511K  infineon
bsc014n06ns.pdf

BSC014N06NSSC BSC014N06NSSC

TypeBSC014N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 1.45 mW Superior thermal resistanceID 100 A N-channelQOSS nC 100 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 89 Pb-free lead plating; RoHS compliantPG-

 6.1. Size:641K  infineon
bsc014n04ls.pdf

BSC014N06NSSC BSC014N06NSSC

BSC014N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.4 mW Very low on-state resistance RDS(on)ID 100 A 100% avalanche testedQoss 54 nC Superior thermal resistanceQg(0V..10V) 61 nC N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target applications(

 6.2. Size:598K  infineon
bsc014n04lsi.pdf

BSC014N06NSSC BSC014N06NSSC

BSC014N04LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.45 mW Integrated monolithic Schottky-like diodeA ID 100 Very low on-resistance RDS(on)QOSS 53 nC 100% avalanche tested55 nC QG(0V..10V) N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target a

 6.3. Size:700K  infineon
bsc014n03ls .pdf

BSC014N06NSSC BSC014N06NSSC

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 6.4. Size:463K  infineon
bsc014n03ls.pdf

BSC014N06NSSC BSC014N06NSSC

BSC014N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.4mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 6.5. Size:466K  infineon
bsc014n03lsg.pdf

BSC014N06NSSC BSC014N06NSSC

BSC014N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.4mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 6.6. Size:540K  infineon
bsc014n03msg.pdf

BSC014N06NSSC BSC014N06NSSC

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 6.7. Size:194K  infineon
bsc014n03ms.pdf

BSC014N06NSSC BSC014N06NSSC

BSC014N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 1.4mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 1.75GS 100% avalanche testedI 100 AD N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R prod

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