BSC0501NSI. Аналоги и основные параметры
Наименование производителя: BSC0501NSI
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 29 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 530 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
Тип корпуса: SUPERSO8
Аналог (замена) для BSC0501NSI
- подборⓘ MOSFET транзистора по параметрам
BSC0501NSI даташит
..1. Size:1555K infineon
bsc0501nsi.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0501NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0501NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
8.1. Size:485K infineon
bsc050n03ms.pdf 

BSC050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS
8.2. Size:1364K infineon
bsc050n10ns5.pdf 

BSC050N10NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 100 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 175 C rated Product Validation Qualified for
8.3. Size:548K infineon
bsc050n03msg5.pdf 

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8.4. Size:1634K infineon
bsc050ne2ls .pdf 

n-Channel Power MOSFET OptiMOS BSC050NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC050NE2LS 1 Description OptiMOS 25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMO
8.5. Size:482K infineon
bsc050n03ls.pdf 

BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5 mW Optimized technology for DC/DC converters ID 80 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
8.6. Size:520K infineon
bsc050n04lsg.pdf 

BSC050N04LS G OptiMOS 3 Power-Transistor Product Summary Features VDS 40 V Fast switching MOSFET for SMPS RDS(on),max 5.0 mW Optimized technology for DC/DC converters ID 85 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S
8.7. Size:1561K infineon
bsc0503nsi.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0503NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0503NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
8.8. Size:830K infineon
bsc050ne2ls.pdf 

BSC050NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter RDS(on),max 5.0 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 58 A 100% avalanche tested QGD 1.3 nC Superior thermal resistance QG(0V..10V) 10.4 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8
8.9. Size:691K infineon
bsc050n03ls .pdf 

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8.10. Size:522K infineon
bsc050n03lsg.pdf 

BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5 mW Optimized technology for DC/DC converters ID 80 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
8.11. Size:1570K infineon
bsc0504nsi.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0504NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0504NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
8.12. Size:1580K infineon
bsc0502nsi.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0502NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0502NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
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