Справочник MOSFET. BSC0501NSI

 

BSC0501NSI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSC0501NSI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 29 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 530 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
   Тип корпуса: SUPERSO8

 Аналог (замена) для BSC0501NSI

 

 

BSC0501NSI Datasheet (PDF)

 ..1. Size:1555K  infineon
bsc0501nsi.pdf

BSC0501NSI
BSC0501NSI

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0501NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0501NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis

 8.1. Size:485K  infineon
bsc050n03ms.pdf

BSC0501NSI
BSC0501NSI

BSC050N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

 8.2. Size:1364K  infineon
bsc050n10ns5.pdf

BSC0501NSI
BSC0501NSI

BSC050N10NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 175C ratedProduct Validation:Qualified for

 8.3. Size:548K  infineon
bsc050n03msg5.pdf

BSC0501NSI
BSC0501NSI

% ! % D %0S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD F:7D?3> D7

 8.4. Size:1634K  infineon
bsc050ne2ls .pdf

BSC0501NSI
BSC0501NSI

n-Channel Power MOSFETOptiMOSBSC050NE2LS Data Sheet2.1, 2011-09-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSC050NE2LS1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMO

 8.5. Size:482K  infineon
bsc050n03ls.pdf

BSC0501NSI
BSC0501NSI

BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 8.6. Size:520K  infineon
bsc050n04lsg.pdf

BSC0501NSI
BSC0501NSI

BSC050N04LS GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 40 V Fast switching MOSFET for SMPSRDS(on),max 5.0 mW Optimized technology for DC/DC convertersID 85 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S

 8.7. Size:1561K  infineon
bsc0503nsi.pdf

BSC0501NSI
BSC0501NSI

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0503NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0503NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis

 8.8. Size:830K  infineon
bsc050ne2ls.pdf

BSC0501NSI
BSC0501NSI

BSC050NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 5.0 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 58 A 100% avalanche testedQGD 1.3 nC Superior thermal resistanceQG(0V..10V) 10.4 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

 8.9. Size:691K  infineon
bsc050n03ls .pdf

BSC0501NSI
BSC0501NSI

& " & E $;B1= !#& '$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*-m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>

 8.10. Size:522K  infineon
bsc050n03lsg.pdf

BSC0501NSI
BSC0501NSI

BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 8.11. Size:1570K  infineon
bsc0504nsi.pdf

BSC0501NSI
BSC0501NSI

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0504NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0504NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis

 8.12. Size:1580K  infineon
bsc0502nsi.pdf

BSC0501NSI
BSC0501NSI

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0502NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0502NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis

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